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STP2NC60STP2NC60FP
N-CHANNEL 600V - 7Ω - 1.9A - TO-220/TO-220FP
PowerMesh™II MOSFET
TYPESTP2NC60STP2NC60FP
sssss
VDSS600 V600 V
RDS(on)< 8 Ω< 8 Ω
ID1.9 A1.9 A
TYPICAL RDS(on) = 7 Ω
EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZED
TO-220123123DESCRIPTION
The PowerMESH™II is the evolution of the firstgeneration of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*areafigure of merit while keeping the device at the lead-ing edge for what concerns swithing speed, gatecharge and ruggedness.
APPLICATIONS
sHIGH CURRENT, HIGH SPEED SWITCHINGsSWITH MODE POWER SUPPLIES (SMPS)sDC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
TO-220FPINTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
SymbolVDSVDGRVGSIDIDIDM (1)PTOTdv/dtVISOTstgTj
.
Parameter
Drain-source Voltage (VGS = 0)Drain-gate Voltage (RGS = 20 kΩ)Gate- source Voltage
Drain Current (continuos) at TC = 25°CDrain Current (continuos) at TC = 100°CDrain Current (pulsed)Total Dissipation at TC = 25°CDerating Factor
Peak Diode Recovery voltage slopeInsulation Withstand Voltage (DC)Storage Temperature
Max. Operating Junction Temperature
-–60 to 150
1501.91.27.4700.56
Value
STP2NC60
600600±30
1.9 (*)1.2 (*)7.4 (*)300.24
3.5
2000STP2NC60FP
UnitVVVAAAWW/°CV/nsV°C°C
(•)Pulse width limited by safe operating area
(1)ISD ≤1.9A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX(*) Limited only by Maximum Temperature Allowed
April 20011/9
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STP2NC60/STP2NC60FP
THERMAL DATA
TO-220
Rthj-caseRthj-ambRthc-sink
Tl
Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1.76
62.50.5300
TO-220FP4.125
°C/W°C/W°C/W°C
AVALANCHE CHARACTERISTICS
SymbolIAREAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1.980
UnitAmJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
Breakdown VoltageZero Gate Voltage
Drain Current (VGS = 0)Gate-body LeakageCurrent (VDS = 0)
Test Conditions
ID = 250 µA, VGS = 0VDS = Max Rating
VDS = Max Rating, TC = 125 °CVGS = ±30V
Min.600
110±100
Typ.
Max.
UnitVµAµAnA
ON (1)
SymbolVGS(th)RDS(on)ID(on)
Parameter
Gate Threshold VoltageStatic Drain-source On Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µAVGS = 10V, ID = 0.7 AVDS > ID(on) x RDS(on)max, VGS=10V
1.9Min.2
Typ.37
Max.48
UnitVΩA
DYNAMIC
Symbolgfs (1)CissCossCrss
Parameter
Forward TransconductanceInput CapacitanceOutput CapacitanceReverse Transfer Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max, ID=0.7A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.1.25160263.8
Max.
UnitSpFpFpF
2/9
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STP2NC60/STP2NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
Symboltd(on)trQgQgsQgd
Parameter
Turn-on Delay Time Rise TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge
Test Conditions
VDD = 300V, ID = 0.7 A RG=4.7Ω VGS = 10V(see test circuit, Figure 3)VDD = 480V, ID = 1.4 A,VGS = 10V
Min.
Typ.888.52.82.8
11.5Max.
UnitnsnsnCnCnC
SWITCHING OFF
Symboltr(Voff)tftc
Fall TimeCross-over Time
Parameter
Off-voltage Rise Time
Test Conditions
VDD = 480V, ID = 1.4 A, RG=4.7Ω, VGS = 10V(see test circuit, Figure 5)
Min.
Typ.25934
Max.
Unitnsnsns
SOURCE DRAIN DIODE
SymbolISDISDM (2)VSD (1)trrQrrIRRM
Parameter
Source-drain CurrentSource-drain Current (pulsed)Forward On VoltageReverse Recovery TimeReverse Recovery ChargeReverse Recovery Current
ISD = 1.4 A, VGS = 0ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C(see test circuit, Figure 5)
5009503.8
Test Conditions
Min.
Typ.
Max.1.97.41.6
UnitAAVnsnCA
Note:1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2.Pulse width limited by safe operating area.
Safe Operating Area for TO-220Safe Operating Area for TO-220FP
3/9
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STP2NC60/STP2NC60FP
Thermal Impedance for TO-220Thermal Impedance for TO-220FPOutput CharacteristicsTransfer Characteristics
TransconductanceStatic Drain-source On Resistance4/9
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STP2NC60/STP2NC60FP
Gate Charge vs Gate-source Voltage
Capacitance VariationsNormalized Gate Thereshold Voltage vs Temp.Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics5/9
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STP2NC60/STP2NC60FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
6/9
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STP2NC60/STP2NC60FP
TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.154 0.151 1.27 0.050 16.4 0.5ACD1L2DF1G1EDia.L5L7L6L4P011CL9F2FGH27/9
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STP2NC60/STP2NC60FP
TO-220FP MECHANICAL DATADIM.MIN.ABDEFF1F2GG1HL2L3L4L6L7Ø28.69.815.9934.42.52.50.450.751.151.154.952.4101630.610.616.49.33.21.1260.3850.6260.3540.118mmTYP.MAX.4.62.72.750.711.71.75.22.710.4MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.3930.6301.2040.4170.50.3660.126inchTYP.MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409ABL3L6L7¯F1DFG1EHF2123L4L28/9
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STP2NC60/STP2NC60FP
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