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TIP105/106/107TIP105/106/107
Monolithic Construction With Built In Base-Emitter Shunt Resistors
•••••
High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation VoltageIndustrial Use
Complementary to TIP100/101/102
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO
Parameter
Collector-Base Voltage : TIP105
: TIP106 : TIP107 Collector-Emitter Voltage : TIP105
: TIP106 : TIP107 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC)
Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C)
TJ TSTG
Junction Temperature Storage Temperature
Value - 60 - 80- 100 - 60 - 80- 100 - 5 - 8 - 15 - 1 2 80150- 65 ~ 150
UnitsVVVVVVVAAAWW°C°C
Equivalent CircuitC VCEO
B VEBO IC ICP IB PC
R1R2ER1≅10kΩR2≅0.6kΩ
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP105: TIP106: TIP107 Collector Cut-off Current
: TIP105: TIP106: TIP107 Collector Cut-off Current
: TIP105: TIP106: TIP107 Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance
Test Condition
IC = -30mA, IB = 0
Min. -60 -80-100
-50 -50 -50 -50 -50 -50 -2
1000 200
20000 -2 -2.5 -2.8 300
VVVpF
Max.
UnitsVVVµAµAµAµAµAµAmA
ICEO
VCE = -30V, IB = 0 VCE = -40V, IB = 0 VCE = -50V, IB = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCB = -100V, IE = 0 VBE= -5V, IC = 0 VCE = -4V, IC = -3A VCE = -4V, IC = -8A IC = -3A, IB = -6mA IC = -8A, IB = -80mA VCE = -4V, IC = -8A VCB = -10V, IE = 0, f = 0.1MHz
ICBO
IEBO hFE
VCE(sat) VBE(on) Cob
©2001 Fairchild Semiconductor CorporationRev. A1, June 2001
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TIP105/106/107Typical Characteristics -5 10kIB = -1000 uAIB = -800 uAIB = -700 uAVCE = -4VIC[A], COLLECTOR CURRENT-4IB = -900 uA-3IB = -500 uAIB = -400 uAhFE, DC CURRENT GAINIB = -600 uA1k -2IB = -300 uA-1IB = -200 uA-0-0-1-2-3-4-5100-0.1-1-10VCE[V], COLLECTOR-EMITTER VOLTAGEIc[A], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10k-100kIC = 500 IBf = 0.1 MHzIE = 0-10kCob[pF], CAPACITANCE1k 100VBE(sat)-1kVCE(sat)10-100-0.1-1-10-1001-0.1-1-10-100IC[A], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation VoltageFigure 4. Collector Output Capacitance -10010090 IC[mA], COLLECTOR CURRENT1ms-10PC[W], POWER DISSIPATION80706050403020100DC-0.1TIP105TIP106TIP107-0.01-0.1-1-10-100 02550o75100125150175VCE[V], COLLECTOR-EMITTER VOLTAGETC[C], CASE TEMPERATUREFigure 5. Safe Operating AreaFigure 6. Power Derating©2001 Fairchild Semiconductor CorporationRev. A1, June 2001
-1 100µs5ms元器件交易网www.cecb2b.com
TIP105/106/107Package DemensionsTO-2209.90 ±0.201.30 ±0.102.80 ±0.104.50 ±0.20(8.70)ø3.60 ±0.10(1.70)1.30–0.05+0.109.20 ±0.20(1.46)13.08 ±0.20(1.00)(3.00)15.90 ±0.201.27 ±0.101.52 ±0.100.80 ±0.102.54TYP[2.54 ±0.20]2.54TYP[2.54 ±0.20]10.08 ±0.3018.95MAX.(3.70)(45°)0.50–0.05+0.102.40 ±0.2010.00 ±0.20Dimensions in Millimeters©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
©2001 Fairchild Semiconductor CorporationRev. H3