2SA1201PNPTransistors■ Features1.700.1 ● High voltage ● High transition frequency ● Complementary to 2SC28810.420.10.460.11.Base2.Collector3.Emitter
■ Absolute Maximum Ratings Ta = 25℃Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature rangeSymbolVCBOVCEOVEBOICPCTJTstgRating-120-120-5-0.80.5150 -55 to 150AW℃VUnit■ Electrical Characteristics Ta = 25℃Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base-emitter saturation voltage Base - emitter voltage DC current gain Collector output capacitance Transition frequencySymbolVCBOVCEOVEBOICBOIEBOTest Conditions Ic= -1mA， IE=0 Ic= -10 mA， IB=0 IE= -1mA， IC=0 VCB= -120 V , IE=0 VEB= -5V , IC=0Min-120-120-5-100-100-1-1.2-18012024030pFMHzV nAVTypMaxUnitVCE(sat) IC=-500 mA, IB=-50mAVBE(sat) IC=-500 mA, IB=-50mAVBEhFECobfTVCE=- 5V, IC= -500 mA VCE= -5V, IC= -100mA VCB= -10V, IE= 0,f=1MHz VCE= -5V, IC= -100mA■ Classification of hfeMarkingRankRangeDOO80-160DYY120-2402SA1201SMDTypePNPTransistors■ Typical Characterisitics